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| Optimization and Research on High Overload Ability of MEMS High-g Accelerometer |
| Shi Yun-bo;Li Ping; Zhu Zheng-qiang; Liu Jun; Wang Rui-rong |
| National key laboratory for electronic measurement technology，north university of china，taiyuan 030051，China |
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Abstract The structure is easy to destroy if the designed MEMS high-g acceleration sensor has less-overload ability, when it is applied to the harsh impact environment. The paper analyzes the sensor structure on the impact of anti-overload capacity and the statistic of structural damage of the sensor in high impact testing, a new method is put forward, which can optimize the overload-resistant ability of the high-g acceleration sensor. The method is to add the chamfer in the root of beam which is the most fractured part，in order to disperse the stress of these areas. When the impact load takes effect on the sensor structure, it can increase the high-overload-resistant ability of the acceleration sensor.The method can be tested feasibitily from theoretical simulation. Then the sensors are tested by Hopkinson bar test method. The test result indicates that the high-overload-resistant capacity of the accelerometer can be increased from 180,000g to 240,000g, which shows the optimization method is obvious, and apparently enhances the high-overload-resistant ability of such kind of acceleration sensor. The designed acceleration sensor comes up to a more ideal high-overload ability.
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Received: 10 May 2010
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Corresponding Authors:
Shi Yun-bo
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2011, Vol. 30 
