Abstract:With the development of high integration and high density of electronic equipment, the spacing of bonding wires inside chips becomes smaller and smaller.In harsh vibration environment, bonding wires may have cross, touch short circuit and other reliability problems.Here, aiming at the short circuit problem of a certain chip bonding wire in practical engineering, the natural frequency of the chip’s bonding wire was obtained with theoretical analysis.Establishing the finite element model was used to study the contact problem caused by bonding wire deformation in random vibration, and the threshold value of the power spectral density of bonding wire contact acceleration was obtained.Finally, the high-speed camera technique was used to do test verification.The results showed that the theoretical and numerical analysis method can accurately obtain the impact contact threshold of bonding wire to provide a reliability criterion for application of bonding wires in vibration environment.
代锋. 随机振动键合丝变形碰触阀值研究[J]. 振动与冲击, 2021, 40(9): 228-231.
DAI Feng. Contact threshold of random vibration bonding wire deformation. JOURNAL OF VIBRATION AND SHOCK, 2021, 40(9): 228-231.
[1]KUNG H K, HSIUNG J C, LEE J N. Empirical equation of wire sag model for semiconductor packaging with numerical and experimental verification[J].IEEE Transactions on Components, Packaging, and Manufacturing Technology, 2013,3(1): 157-167.
[2]CHE F X, WAI L C, CHAI T C.Failure mode and mechanism analysis for Cu wire bond on Cu/Low-k chip by wire pull test and finite-element analysis[J].IEEE Transactions on Device and Materials Reliability, 2018,18(2):1.
[3]PEDERSEN K B, NIELSEN D A, CZEMY B, et al. Wire bond degradation under thermo-and pure mechanical loading[J].Microelectronics Reliability,2017,76/77:373-377.
[4]HARMAN G G.Wire bonding in microelectronics[M].3rd ed.New York: McGraw-Hill Companies, 2010.
[5]MAZLOUM-NEJADARI A, KHATIBI G, CZEMY B, et al.Reliabily of Cu wire bonds in microelectronic packages[J].Microelectronics Reliability,2017,74:147-154.
[6]KUNG H K, SUN Y, LEE J N, et al.A method to determine the sweep resistance of wire bonds for microelectronic packaging[J].Microelectron Engineering, 2008, 85(9):1902-1909.
[7]KUNG H K.Evaluation of sweep resistance of Q auto-loop and square-loop bonds for semiconductor packaging technology[J].Microelectron Reliability, 2007, 47(7): 1103-1112.
[8]MANOHARAN S, PATEL C, HUNTER S, et al.Mechanism of wire bond shear testing[J].Microelectronics Reliability,
2018, 88/89/90: 738-744.
[9]赵爽,赵子华,雷鸣,等.微米尺度铜键合丝疲劳性能研究[J].机械工程学报,2016,52(18):70-76.
ZHAO Shuang, ZHAO Zihua, LEI Ming, et al.Research on fatigue performance of copper bonded wires at micron scale[J]. Journal of Mechanical Engineering, 2016, 52(18): 70-76.
[10]KUNG H K, HUANG B W.High-temperature wire sweep characteristics of semiconductor package for variable loop-height wirebonding technology[J].Microelectron Engineering, 2006,83(2):197-205.
[11]STEINBERG D.Vibration analysis for eletronic equipment[M].Hoboken, NJ: John Wiley & Song,Inc,2000.