摘要
设计的MEMS高g加速度传感器抗高过载能力差，将导致在冲击等恶劣环境中应用时结构易破坏。本文通过分析传感器结构对其抗过载能力的影响，及在高冲击测试中传感器结构损坏情况的统计，提出了一种新颖的优化高g加速度传感器抗高过载能力的方法。该方法是在结构最易断裂的梁根部和端部添加倒角，以分散在冲击作用下传感器结构这些部位受到的应力，进而提高加速度传感器的高过载能力，并从理论仿真分析了该方法的可行性。最后利用Hopkinson杆测试方法对优化前后的加速度传感器进行冲击测试，测试结果表明，加速度计的抗高过载能力从180,000 g提高到240,000g，说明该优化方法显著，明显提高了该类加速度传感器的抗高过载能力，设计的加速度传感器达到了较理想的抗高过载能力。
Abstract
The structure is easy to destroy if the designed MEMS high-g acceleration sensor has less-overload ability, when it is applied to the harsh impact environment. The paper analyzes the sensor structure on the impact of anti-overload capacity and the statistic of structural damage of the sensor in high impact testing, a new method is put forward, which can optimize the overload-resistant ability of the high-g acceleration sensor. The method is to add the chamfer in the root of beam which is the most fractured part，in order to disperse the stress of these areas. When the impact load takes effect on the sensor structure, it can increase the high-overload-resistant ability of the acceleration sensor.The method can be tested feasibitily from theoretical simulation. Then the sensors are tested by Hopkinson bar test method. The test result indicates that the high-overload-resistant capacity of the accelerometer can be increased from 180,000g to 240,000g, which shows the optimization method is obvious, and apparently enhances the high-overload-resistant ability of such kind of acceleration sensor. The designed acceleration sensor comes up to a more ideal high-overload ability.
关键词
MEMS高g加速度传感器 /
高过载 /
Hopkinson杆冲击测试 /
倒角 /
优化
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Key words
MEMS high-g accelerometer /
high overload /
Hopkinson bar impact test /
chamfer /
optimization
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石云波;李平;朱正强;刘俊;张晓明.
MEMS高g加速度传感器高过载能力的优化研究[J]. 振动与冲击, 2011, 30(7): 271-274
Shi Yun-bo;Li Ping;Zhu Zheng-qiang;Liu Jun;Wang Rui-rong.
Optimization and Research on High Overload Ability of MEMS High-g Accelerometer[J]. Journal of Vibration and Shock, 2011, 30(7): 271-274
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