Investigation of silicon wafer surface morphology and roughness processed&nbsp; by fixed abrasive polishing with assistance of ultrasonic vibration

PDF(1851 KB)

Journal of Vibration and Shock ›› 2018, Vol. 37 ›› Issue (24) : 237-243.

Investigation of silicon wafer surface morphology and roughness processed by fixed abrasive polishing with assistance of ultrasonic vibration

FU Peng1, YANG Weiping1, WU Yongbo2

Author information +

History +

Abstract

Based on the high efficiency and surface quality of ultrasonic machining characteristics, and combined with high effectively controlling and little pollution features of fixed abrasive polishing, this work is to explore the process mechanism of the ultrasonic elliptic vibration assisted fixed abrasive chemical mechanical polishing (CMP) technique on material removal, super smooth surface and surface roughness of silicon wafer.It is considered that the path of polishing tool is the main factor to influence the material removal and surface polishing quality.Therefore, according to the experimental system, a mathematical model of polishing tool path and path density was proposed, and then the simulation models of materials removal, surface morphology and surface roughness were built.Furthermore, the experiment was launched.The present study could provide fruitful suggestion for selecting process parameters of fixed abrasive CMP technique for silicon wafer, and theoretical basis for industrial application and future experimental studies.

Key words

ultrasonic vibration / fixed abrasive / polishing tool path / processing mechanism

Cite this article

EndNote

Ris (Procite)

Bibtex

Download Citations

FU Peng1, YANG Weiping1, WU Yongbo2. Investigation of silicon wafer surface morphology and roughness processed by fixed abrasive polishing with assistance of ultrasonic vibration[J]. Journal of Vibration and Shock, 2018, 37(24): 237-243

References

[1] 吴明明,周兆忠,巫少龙.单晶硅片的制造技术[J].制造技术与机床,2005(3):72-75.
M.M. Wu, Z.Z. Zhou, S.L. Wu. Manufacturing Technique of Monocrystal Silicon Wafers[J].Manufacturing Technology & Machine Tool,2005(3): 72-75.
[2] 郭东明,康仁科,苏建修,等.超大规模集成电路制造中硅片平坦化技术的未来发展[J].机械工程学报,2003,39(10)：100-105.
D.M. Guo, R.K. Kang, J.X. Su, et al. Future Development on Wafer Planarization Technology in ULSI Fabrication[J].Chinese Journal of Mechanical Engineering, 2003,39(10):100-105.
[3] L.B. Zhou, T.S. Shiina, Z.J. Qiu, et al. Research on Chemo-Mechanical Grinding of Large Size Quartz Glass Substrate[J].Precision Engineering,2009,33: 499-504.
[4] 王凯,朱永伟,郑方志,等.游离碳化硅磨粒辅助的蓝宝石固结磨料研磨研究[J].人工晶体学报,2015,44(11):2937-2942.
K. Wang, Y.W. Zhu, F.Z. Zheng, et al. Study on the Grinding of Sapphire Using Fixed Abrasive with Free Silicon Carbide Particles[J].Journal of Synthetic Crystals,2015,44(11) :2937- 2942.
[5] Z.J. Pei, G.R. Fisher, J. Liu. Grinding of Silicon Wafers: A Review from Historical Perspectives [J]. International Journal of Machine Tools & Manufacture, 2008,48: 1297-1307.
[6] Y.R. Jeng, P.Y. Huang. A Material Removal Rate Model Considering Interfacial Micro-Contact Wear Behavior for Chemical Mechanical Polishing[J]. Journal of Tribology,2005, 127(1): 190-197.
[7] Y.W. Zhao, L. Chang, S.H. Kim. A Mathematical Model for Chemical Mechanical Polishing Based on Formation and Removal of Weakly Bonded Molecular Species[J]. Wear,2003,254: 332-33.
[8] K. Qin, B. Moudgil, C.W. Park. A Chemical Mechanical Polishing Model Incorporating Both the Chemical and Mechanical Effects[J].Thin Solid Films,2004,446 (2): 277-286.
[9] G. Ahmadi, X. Xia. A Model for Mechanical Wear and Abrasive Particle Adhesion During the Chemical Mechanical Polishing Process[J]. Journal of The Electrochemical Society,2001, 148(3): G99-G109.
[10] P.H. Chen, H.C. Shih, B.W. Huang, et al. Catalytic-Pad Chemical Kinetics Model of CMP[J].Electrochemical and Solid-State Letters,2003, 6(12):G140-G142.
[11] W. Che, Y.J. Guo, A. Chandra, et al. A Scratch Intersection Model of Material Removal During Chemical Mechanical Planarization(CMP)[J].Journal of Manufacturing Science & Engineering,2005, 127 (3): 545-554.
[12] 张建华,田富强,张明路,等.微磨削与超声振动复合加工技术研究现状与展望[J].振动与冲击,2016,38(8):97-109.
J.H. Zhang, F.Q. Tian, M.L. Zhang, et al. Review of Studies on Micro-Grinding and Ultrasonic-Assisted Machining [J].Journal of Vibration and Shock,2016,38(8):97-109.
[13] P. Cuo, K.F. Ehmann. An Analysis of the Surface Generation Mechanics of the Elliptical Vibration Texturing Process[J].International Journal of Machine Tools & Manufacture,2013,64(1): 85–95.
[14] J.G. Cao, Y.B. Wu, D. Lu, et al. Material Removal Behavior in Ultrasonic-Assisted Scratching of SiC Ceramics with a Single Diamond Tool[J].International Journal of Machine Tools & Manufacture,2014,79(4): 49–61.
[15] W.P. Yang, Y.B. Wu, M. Kato. A New Approach to Silicon Wafer Edge Treatment by Ultrasonically Assisted Polishing(UAP).International Journal of Materials and Product Technology,2008,31(2-4),159-175.
[16] 陈扬,陈志刚,李霞章,等.硅晶片化学机械抛光材料去除机制与模型[J].润滑与密封,2006,4:120-126.
Y. Chen, Z.G. Chen, X. Li, et al. Material Removal Mechanism and Model in Chemical Mechanical Polishing of Silicon Wafers[J].Lubrication Engineering,2006,4:120-126.
[17] D.L. Rhode, S.R. Sobolik. Simulation of Subsonic Flow Through a Generic Labyrinth Seal[J].Journal of Engineering for Gas Turbines and Power,1986,108: 674-680.
[18] 廖念钊.互换性与技术测量[M].北京:中国计量出版社,2007.
N.Z. Liao. Interchangeability and Technological Measurement[M].Beijing:China Measurement Press,2007.